? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v gs continuous 20 v i d25 t c = 25 c; note 1 14 a i d90 t c = 90 c, note 1 10 a i d(rms) package lead current limit 45 a e as i o = 10a, t c = 25 c 690 mj e ar i o = 20a 1 mj p d t c = 25 c 125 w t j -55 ... +150 c t jm 150 c t stg -55 ... +125 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol rms leads-to-tab, 50/60 hz, t = 1 minute 2500 v~ f c mounting force 11 ... 65 / 2.4 ...11 n/lb weight 3g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. r ds(on) v gs = 10 v, i d = i d90 , note 3 160 190 m ? v gs = 10 v, i d = i d90 , note 3 t j = 125 c 463 m ? v gs(th) v ds = v gs , i d = 1 ma 3.5 5.5 v i dss v ds = v dss t j = 25 c1 a v gs = 0 v t j = 125 c10 a i gss v gs = 20 v dc , v ds = 0 100 na g = gate, d = drain, s = source * patent pending v dss = 600 v i d25 = 14 a r ds(on) = 190 m ? ? ? ? ? ds98848c(1/04) features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z 3 rd generation coolmos power mosfet - high blocking capability - low on resistance - avalanche rated for unclamped inductive switching (uis) z low thermal resistance due to reduced chip thickness z low drain to tab capacitance(<30pf) applications z switched mode power supplies (smps) z uninterruptible power supplies (ups) z power factor correction (pfc) z welding z inductive heating advantages z easy assembly: no screws or isolation foils required z space savings z high power density coolmos tm power mosfet in isoplus220 tm package electrically isolated back surface n-channel enhancement mode low r ds(on) , superjunction mosfet ixkc 20n60c coolmos is a trademark of infineon technologies, ag g d s isoplus 220lv tm isolated back surface* e153432 preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions ch aracteristic values (t j = 25 c, unless otherwise specified) min. typ. max. q g(on) 79 nc q gs v gs = 10 v, v ds = 350 v, i d = 20 a 21 nc q gd 46 nc t d(on) 20 ns t r v gs = 10 v, v ds = 380v 55 ns t d(off) i d = 20 a, r g = 3.3 ? 60 ns t f 10 ns r thjc 1 k/w r thch 0.30 k/w reverse conduction characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v sd i f = 10 a, v gs = 0 v 0.8 1.2 v note 3 note: 1. mosfet chip capability 2. intrinsic diode capability 3. pulse test, t 300 s, duty cycle d 2 % ixkc 20n60c to-220lv outline
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